isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 high density mounting phototransistor optically coupled isolators description the IS2701-1 is an optically coupled isolator consisting of an infrared light emitting diode and npn silicon photo transistor in a space efficient dual in line plastic package. features l marked as fpt1. l current transfer ratio min. 50% l isolation voltage (3.75kv rms ,5.3kv pk ) l all electrical parameters 100% tested l drop in replacement for nec ps2701-1 applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com IS2701-1 db92850l-aas/a3 22/4/02 dimensions in mm
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 35 v i c = 0.5ma emitter-collector breakdown (bv eco ) 6 v i e = 0.1ma collector-emitter dark current (i ceo ) 100 na v ce = 20v coupled current transfer ratio (ctr) 50 600 % 5ma i f , 5v v ce optional ctr grades: IS2701-1a 80 160 % 5ma i f , 5v v ce IS2701-1b 130 260 % 5ma i f , 5v v ce IS2701-1c 200 400 % 5ma i f , 5v v ce IS2701-1d 300 600 % 5ma i f , 5v v ce collector-emitter saturation voltagev ce (sat) 0.2 v 20ma i f , 1.0ma i c input to output isolation voltage v iso 3750 v rms see note 1 5300 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 4 18 m s v ce = 2v , output fall time tf 3 18 m s i c = 2ma, r l = 100 w electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 35v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 170mw (derate linearly 2.26mw/ c above 25c) note 1 measured with input leads shorted together and output leads shorted together. db92850l-aas/a3 22/4/02
12 / 07 / 01 appendix to mini flat pack fpt - aas/a1 taping dimensions description symbol dimensions in mm ( inches ) tape wide w 12 0.3 ( .47 ) pitch of sprocket holes p 0 4 0.1 ( .15 ) distance of compartment f p 2 5.5 0.1 ( .217 ) 2 0.1 ( .079 ) distance of compartment to compar tment p 1 8 0.1 ( .315 )
12 / 07 / 01 appendix to mini flat pack fpt - aas/a1 characteristic curves fig.1 forword current fig.2 collector power dissiption vs. ambient temperature fig.4 forward current vs. forward fig.5 current transfer ratio vs. forward current fig.6 collector current vs. collector-emitter voltage 0 -55 ta=75 c 50 c 25 c 0 c -25 c ta=25 c pc(max.) 5ma 10ma 20ma vs. ambient temperatute ambient temperature ta ( c) ambient temperature ta ( c) collector power dissipation pc (mw) current transfer ratio ctr (%) collector current ic (ma) fig.3 collector-emitter saturation voltage vs. forward current ce ic=0.5ma 1ma 3ma 7ma 5ma ta=25 c collecotr-emitter saturation voltage v (sat) (v) voltage o o o o o o o o o o 125 0 -55 125 25 50 75 100 10 20 30 40 50 60 0 50 100 150 200 0 1 0 0 15 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 2 5 10 20 50 100 200 500 0 1 0 0 2 5 10 20 50 20 40 60 80 100 120 140 160 180 200 1 2 3 4 5 6 7 8 9 10 30 50 10 5 20 40 25ma 15ma collector-emitter voltage v ce (v) forward current i f (ma) forward current i f (ma) forward voltage v f (v) forward current i f (ma) forward current i f (ma) v ce =5v ta=25 c i f =30ma 100 75 50 25 0
12 / 07 / 01 appendix to mini flat pack fpt - aas/a1 characteristic curves tr tf td ts fig.8 collector-emitter saturation voltage fig.9 collector dark current vs. ambient temperature fig.10 response time vs. load fig.11 frequency response 0 ce vs. ambient temperature ambient temperature ta ( c) ambient temperature ta ( c) ambient temperature ta ( c) frequency f (khz) response time ( s) relative current transfer ratio (%) voltage gain av (db) collector-emitter saturation voltage v (sat) (v) o o o o o 20 40 60 80 100 50 100 150 0 20 40 80 100 0.2 0.05 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 0.5 1 2 5 10 20 50 100 200 500 0.5 20 10 0 2 10 100 500 resistance fig.7 relative current transfer ratio vs. ambient temperature 0.02 0.04 0.06 0.08 0.10 1 5 20 50 60 test circuit for response time test circuit for frequency response input input vcc ts output output tr output vcc td tf 10% 90% load resistance r l (k ) collector dark current i ceo (na) v ce =20v i f =5ma v ce =2v i f =20ma i c =1ma v ce =2v i c =2ma ta=25 c r d r l r d r l r l =10k w 1k w 100 w v ce =2v i c =2ma ta=25 c 1 10 10000 1000 100
12 / 07 / 01 appendix to mini flat pack fpt - aas/a1 temperature profile of soldering reflow (1) one time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 1 minute 2 minutes 1.5 minutes 1 minute 25 c 180 c 200 c 230 c (2) when using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of above (1).
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